New peculiarities of interband tunneling in broken-gap heterostructures
Identifieur interne : 000460 ( Russie/Analysis ); précédent : 000459; suivant : 000461New peculiarities of interband tunneling in broken-gap heterostructures
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Abstract
We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.
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Chao</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Lund University, Sölvegutum 14A</s1><s2>233 62 Lund</s2><s3>SWE</s3><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>233 62 Lund</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0498337</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 04-0498337 INIST</idno><idno type="RBID">Pascal:04-0498337</idno><idno type="wicri:Area/Main/Corpus">00AE83</idno><idno type="wicri:Area/Main/Repository">00B061</idno><idno type="wicri:Area/Russie/Extraction">000460</idno></publicationStmt><seriesStmt><idno type="ISSN">1017-2653</idno><title level="j" type="main">SPIE proceedings series</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Anisotropy</term><term>Binary compounds</term><term>Double barrier structure</term><term>Gallium antimonides</term><term>Heterostructures</term><term>IV characteristic</term><term>Indium arsenides</term><term>Interband transitions</term><term>Mismatch lattice</term><term>Quasiparticles</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transition interbande</term><term>Effet tunnel</term><term>Hétérostructure</term><term>Structure 2 barrières</term><term>Accommodation réseau</term><term>Anisotropie</term><term>Quasiparticule</term><term>Caractéristique courant tension</term><term>Indium arséniure</term><term>Composé binaire</term><term>Aluminium antimoniure</term><term>Gallium antimoniure</term><term>7340G</term><term>As In</term><term>InAs</term><term>Al Sb</term><term>AlSb</term><term>Ga Sb</term><term>GaSb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. The current-voltage (I-V) characteristics show strong dependence on the lattice-mismatched strain.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1017-2653</s0></fA01><fA05><s2>5401</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>New peculiarities of interband tunneling in broken-gap heterostructures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Micro- and nanoelectronics 2003 : Zvenigorod, 6-10 October 2003</s1></fA09><fA11 i1="01" i2="1"><s1>ZAKHAROVA (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>YEN (S. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHAO (K. 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All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>04-0498337</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>SPIE proceedings series</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate the interband tunneling processes in a new type of heterostructures (broken-gap heterostructures) made from InAs, AlSb, and GaSb. Both the single-barrier and double-barrier structures are considered with the lattice mismatched strain taken into account. It is found that strain and bulk anisotropy of quasiparticle dispersions can result in additional peaks of the tunneling probability. 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Conference</s1><s3>Zvenigorod RUS</s3><s4>2003-10-06</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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